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Andriy Kovalskiy

Andriy Kovalskiy

Professor

Physics, Engineering and Astronomy

 

Ph.D. 固态物理-乌克兰利沃夫国立大学伊万·弗兰科

B.Sc. and M.Sc. 无线电电子材料工程学位-伊万·弗兰科国立大学 University of Lviv, Ukraine

Joined the Department in 2011. Recipient of 2013 Richard M. Hawkins Award. 

Co-authored 121 journal papers, 86 peer-reviewed; 3 chapters in books; 6 patents and inventions; 230+ conference contributions; 1270+ citations; h-index 22 (Google Scholar 引用数)，自2004年起h-index 18 (Scopus)

Scientific expertise includes:

  • 玻璃和非晶薄膜的结构
  • 表面科学在非晶固体中的应用
  • 光和电离辐射与非晶固体的相互作用
  • 金属在玻璃基质中的光溶解
  • Photolithography on glasses
  • E-beam nanolithography on glasses
  • 非晶固体的x射线光电子能谱
  • 纳米加工(碳纳米管CVD)
  • Thin film technologies

目前主要研究方向为:非氧化物玻璃的原子和电子结构 and amorphous thin films (EXAFS, XANES, XPS, Raman, positron annihilation); structural dynamics in glasses; interaction of light and ionizing radiation with amorphous solids; surface science in application to solid state disordered media; gray scale photolithography and electron-beam nanostructuring on glasses; amorphous optical IR materials for micro- and nanophotonics.

Recent Research Projects:

  • 2017年至今:项目DMR-1725188“MRI:正电子湮灭的获取 用于增强材料表征的寿命谱仪" -国家科学 Foundation, Co-PI
  • 2014 -目前:项目DMR-1409160“RUI:光诱导结构的辐射选择性 共价键合玻璃薄膜的转变" -国家科学基金会， PI

Chapters in books:

  1. Jain H., Kovalskiy A., Vlcek M. 光刻用硫系玻璃抗蚀剂. In book: Chalcogenide glasses. 制备，性质和应用/编辑. J.-L. Adam and X. Zhang. 牛津-剑桥-费城-新德里:伍德黑德出版社. 2014, p. 562-596.
  2. Matkovskii A.O., Shpotyuk O.I., Vakiv M.M., Kovalskiy A.P. Radiation-stimulated changes of materials properties. 硫系玻璃半导体. In book: Effect of 电子材料的电离辐照/编辑. A.O. Matkovskii. Lviv: Svit. 1994, p. 158-180. (in Russian)
  3. Shpotyuk O.I., Kovalskiy A.P., Sawicki I.V., Matkovskii A.O. Photo- and radiation-chemical 硫系玻璃半导体的转化. In book: Materials and devices for hologram registration / Ed. V.A. Barachevsky. Leningrad: Leningrad State Univ. 1986, p. 12-17. (in Russian).

在同行评审期刊发表论文86篇，其中11篇与本科生合作 students):

  1. Golovchak R., Nazabal V., Bureau B., Oelgoetz J., Kovalskiy A., Jain H. Chemical order 在Ga或Sb修饰的硫化锗玻璃周围的化学计量:高分辨率 XPS and Raman studies. 非结晶固体杂志，卷. 499, 2018, p. 237-244.
  2. Shpotyuk M., Kovalskiy A., Golovchak R., Shpotyuk O. γ辐照诱导的现象学 硫系半导体玻璃光学性质的变化:个案研究 of binary arsenic sulfides. 非结晶固体杂志，卷. 498, 2018, p. 315-322.
  3. Kovalskiy A., White M., Allen J., Golovchak R., Oelgoetz J., Shpotyuk O., Palka K., Slang S., Vlcek M. 无机-有机薄膜复合材料的光响应 chalcogenide glasses. AIP Conference Proceedings, vol. 1981, 2018, 020030 (1-4).
  4. Kovalskiy A., Vlcek M., Palka K., Buzek J., York-Winegar J., Oelgoetz J., Golovchak R., Shpotyuk O., Jain H. 硫化砷表面转化的结构成因 thin films upon UV-irradiation. Applied Surface Science, vol. 394, 2017, p. 604-612.
  5. Shpotyuk O., Bujnakova Z., Balaz P., Ingram A., Demchenko P., Kovalskiy A., Vlcek M., Shpotyuk Ya., Cebulski J., Dziedzic A. pvp稳定的纳米结构效应 四砷四硫as444纳米复合材料. Materials Chemistry and Physics, vol. 186, 2017, p. 251-260.
  6. Mugoni C., Jain H., Montrosi M., Montecchi M, Kovalskiy A., Siligardi C. Structural 偏磷酸锂铜玻璃导电性的起源. Journal of Non-Crystalline Solids, vol. 447, 2016, p. 91-97.
  7. Trimble J., Golovchak R., Oelgoetz J., Brennan C., Kovalskiy A. Structural characterisation 掺Er2O3的氟磷酸锡玻璃. Physics and Chemistry of Glasses ——《欧洲玻璃科学与技术杂志B辑. 57 (1), 2016, p. 27-31.
  8. Shpotyuk O., Kovalskiy A., Trimble J., Vlcek M., Shpotyuk Ya., Koziukhin S. Intrinsic 低温淬火砷trisulï玻璃的相分离. Journal of Non-Crystalline Solids, vol. 430, 2015, p. 16-20.
  9. Cook J., Slang S., Golovchak R., Jain H., Vlcek M., Kovalskiy A. Structural features 二元AsxS100-x硫系玻璃体系的自旋镀膜薄膜，thin Solid Films, vol. 589, 2015, p. 642-648.
  10. Slang S., Palka K., Loghina L., Kovalskiy A., Jain H., Vlcek M. Mechanism of the dissolution As-S硫族玻璃在正丁胺中的反应及其对自旋结构的影响 coated layers. 非结晶固体杂志，卷. 426, 2015, p. 126-131. 
  11. Golovchak R.,  Choi Y. G.,  Kozyukhin S.,  Chigirinsky Yu.,  Kovalskiy A.,  Xiong-Skiba P.,  Trimble J.,  Pafchek R.,  Jain H. 氧掺入GST相变 存储器矩阵，应用表面科学，卷. 332, 2015, p. 533-541.
  12. Golovchak R., Lucas P., Oelgoetz J., Kovalskiy A., York-Winegar J., Saiyasombat C., Shpotyuk O., Feygenson M., Neuefeind J., Jain H. Medium range order and structural 通过FSDP分析，材料化学和 Physics, vol. 153, 2015, p. 432-442.
  13. Xu S.W., Wang R.P., Luther-Davies B., Kovalskiy A., Miller A.C., Jain H. Chemical 用高分辨率x射线光电子能谱探测geexasyse1 -x+y玻璃的有序度 Journal of Applied Physics, vol. 115 (8), 2014, 083518.
  14. Kovalskiy A., Golovchak R., Vlcek M., Jain. H. 的电子和原子结构 具有高分辨率XPS的非晶薄膜:应用实例 & limitations, 非结晶固体杂志，卷. 377, 2013, p. 155-158. 
  15. Golovchak R., Kovalskiy A., Shpotyuk O., Jain H. As-rich的结构组织 selenide glasses. Solid State Communications, vol. 165, 2013, p. 22-26.
  16. Kovalskiy A., Vlcek M., Palka K., Golovchak R., Jain. H. Wavelength dependence of As2S3薄膜的光结构转换，物理学报，卷. 44, 2013, p. 75-81. 
  17. Palka K., Vlcek M., Kovalskiy A. As50Se50薄膜溶解动力学研究 在胺基溶液中，物理学报，卷. 44, 2013, p. 114-119.
  18. York-Winegar J., Harper T., Brennan C., Oelgoetz J., Kovalskiy A., Structure of SnF2-SnO-P2O5 glasses, Physics Procedia, vol. 44, 2013, p. 159-165.
  19. Palumbo V., Kovalskiy A., Jain H., Huey B. D. 银光溶的直接研究 原子力显微镜下三硫化砷薄膜的动力学和可逆性 Nanotechnology, vol. 24 (12), 2013, 125706-1-7. 
  20. Choi Y. G., Kovalskiy A., Cheong B.-K., Jain H. 局部结构在相位中的作用 change of GeTe films. Chemical Physics Letters, vol. 534, 2012, p. 58-61.
  21. Sati D., Kovalskiy A., Golovchak R., Jain H. SbGe40-xSe60玻璃周围的结构 2.67平均配位数，《365bet平台》，卷. 358, 2012, p. 163-167.
  22. Golovchak R., Shpotyuk O., Iovu M., Kovalskiy A., Jain H. Topology and chemical order AsxGexSe1-2x玻璃:高分辨率x射线光电子能谱研究 非结晶固体杂志，卷. 357, 2011, p. 3454-3460.  
  23. Golovchak R., Kozdras A., Shpotyuk O., Gorecki Cz., Kovalskiy A., Jain H. Temperature-dependent As40Se60玻璃的结构弛豫，物理快报A卷. 375, 2011, p. 3032–3036.
  24. Golovchak R., Kovalskiy A., Shpotyuk O., Jain H. In search of energy landscape for 网络眼镜，应用物理通讯，卷. 98, 2011, p. 171905-1-3.
  25. Golovchak R., Shpotyuk O., Kozyukhin S., Shpotyuk M., Kovalskiy A., Jain H. Short-range 基于x射线光电子能谱的富s锗s玻璃的有序演化 of Non-Crystalline Solids, vol. 357, 2011, p. 1797–1803.
  26. Takats V., Miller A. C., Jain H., Kovalskiy A., Kokenyesi S. Investigation of interdiffusion 高分辨率x射线光电子能谱分析Sb/As2S3纳米层状结构; Thin Solid Films, vol. 519 (10), 2011, p. 3437-3442.
  27. Koziukhin S., Golovchak R., Kovalskiy A., Shpotyuk O., Jain H. Valence band structure 二硫系玻璃半导体的高分辨率XPS，半导体， vol. 45 (4), 2011, p. 423-426.
  28. Kovalskiy A., Ganjoo A., Khalid S., Jain H. 结合高分辨率XPS和EXAFS Ag在a-As2S3薄膜中的光溶解研究，非结晶固体学报， vol. 356 (44-49), 2010, p. 2332-2336.
  29. Zhang Y., Yang Y., Zheng J., Chen G., Cheng C., Hwang J. C. M., Ooi B. S., Kovalskiy A., Jain H. 界面玻璃对丝网印刷电性能的影响 硅太阳能电池的银厚膜触点. Thin Solid Films, vol. 518 (24), Suppl. 1 (2010), p. e111-e113. 
  30. Golovchak R., Shpotyuk O., McCloy J. S., Riley B. J., Windisch C.F., Sundaram S. K., Kovalskiy A., Jain H. 基于拉曼光谱的均相As-S玻璃结构模型 光谱和高分辨率XPS. Philosophical Magazine, vol. 90 (34), 2010, p. 4489–4501.
  31. Kovalskiy A., Vlcek M., Cech J., Heffner W. R., Waits C. M., Dubey M., Jain H. Chalcogenide 玻璃电子束和光刻胶超薄灰度图案. Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 8, 2009, p. 043012-1-11.
  32. Mitkova M., Kovalskiy A., Jain H., Sakaguchi Y. 光氧化对光扩散的影响 银在锗硫系玻璃. 光电与高级学报 Materials, vol. 11, 2009, p. 1899-1906. 
  33. Kovalskiy A., Jain H., Mitkova M. 银光扩散过程中化学结构的演化 形成硫化物玻璃薄膜. 非结晶固体杂志，卷. 355, 2009, p. 1924-1929.
  34. Golovchak R., Shpotyuk O., Koziukhin S., Kovalskiy A., Miller A.C., Jain H. Structural 高分辨率x射线光电子能谱法研究富硒锗硒玻璃. Journal of Applied Physics, vol. 105, 2009, p. 103704-1-7. 
  35. Kovalskiy A., Neilson J.R., Miller A.C., Miller F.C., Vlcek M., Jain H. Comparative 材料表面电子与光致结构转化的研究 As35S65 amorphous thin films. Thin Solid Films, vol. 516, 2008, p. 7511-7518.
  36. Kovalskiy A., Miller A., Jain H., Mitkova M. x射线诱导的原位测量 银扩散到Ge30Se70薄膜中. 美国陶瓷学会杂志， vol. 91 (3), 2008, p. 760-765.
  37. Golovchak R., Shpotyuk O., Kovalskiy A., Miller A., Cech J., Jain H. Coordination 铋修饰砷硒化玻璃的缺陷:高分辨率x射线光电子 spectroscopy measurements. Physical Review B, vol. 177, 2008, p. 172201-1-4. (Published 也发表在《365bet》上 & Technology).
  38. Golovchak R., Shpotyuk O., Kozdras A., Vlcek M., Bureau B., Kovalskiy A., Jain H. 短碳链As-Se玻璃的长期物理老化. Journal of Physics: Condensed Matter, vol. 20 (24), 2008, p. 245107-1-7.
  39. Shpotyuk O., Golovchak R., Jain H., Kovalskiy A. 辐射引起的功能 用高分辨率XPS探测硫系玻璃. Physics and Chemistry of Glasses: 欧洲玻璃科学与技术杂志:B部分，卷. 49, 2008, p. 314-316.
  40. Golovchak R., Kovalskiy A., Miller A., Jain H., Shpotyuk O. Structure of Se-rich As-Se 高分辨率光电子能谱玻璃. Physical Review B, vol. 76 (12), 2007, p. 125208-1-7.
  41. Kovalskiy A., Jain H., Neilson J.R., Vlcek M., Waits C.M., Churaman W., Dubey M. On 含银As2S3薄膜灰度图案化的机理. Journal 固体物理与化学，卷. 68, 2007, p. 920-925.
  42. Neilson J.R., Kovalskiy A., Vlcek M., Jain H., Miller F. Fabrication of nano-gratings in arsenic sulphide films. 非结晶固体杂志，卷. 353, 2007, p. 1427-1430. 
  43. Shpotyuk O., Kovalskiy A., Golovchak R., Zurawska A., Jain H. Radiation-induced defects 用光谱学、XPS和PALS方法对硫系玻璃进行了表征. Physica Status Solidi C, vol. 4, 2007, p. 1147-1150. 
  44. Balitska V., Kovalskiy A., Shpotyuk O., Vakiv M. 辐射敏感的不稳定性效应 chalcogenide glasses. Radiation Measurements, vol. 42, 2007, p. 941-943.
  45. Shpotyuk O., Vakiv M., Butkiewicz B., Kovalskiy A., Golovchak R. On the problem of 某些三元硫系玻璃中辐射诱导光学效应的弛豫. 半导体物理，量子电子学 & Optoelectronics, vol. 10 (3), 2007, p. 23-27.
  46. Kovalskiy A., Jain H., Miller A., Golovchak R., Shpotyuk O. A study of reversible γ诱导玻璃体Ge23的结构转变.5Sb11.8S64.7 by high resolution X-ray photoelectron spectroscopy. 物理化学学报B卷. 110, 2006, p. 22930-22934.
  47. Kovalskiy A., Vlcek M., Jain H., Fiserova A., Waits C.M., Dubey M. Development of 灰度光刻用硫系玻璃光刻胶. Journal of Non-Crystalline Solids, vol. 352, 2006, p. 589-594.
  48. Jain H., Kovalskiy A., Miller A. 银光扩散初期的XPS研究 in Ag/a-As2S3 films. 非结晶固体杂志，卷. 352, 2006, p. 562-566.
  49. Shpotyuk O., Kovalskiy A., Filipecki J., Kavetskyy T., Popescu M. Positron annihilation 寿命光谱法作为网络玻璃自由体积概念的实验探针. 玻璃的物理和化学:欧洲玻璃科学与技术杂志; Part B, vol. 47, 2006, p. 131-135.
  50. Kozdras A., Filipecki J., Hyla M., Shpotyuk O., Kovalskiy A., Szymura S. Nanovolume 玻璃状As3Se3中的正电子陷阱. 非结晶固体杂志，卷. 351, 2005, p. 1077-1081.
  51. Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R. Threshold restoration effects 在ï§辐照的硫系玻璃中. 非结晶固体杂志，卷. 351, 2005, p. 993-997.
  52. Kavetskyy T., Shpotyuk O., Kovalskiy A., Tsmots V. Structural-chemical approach for compositional dependences of ï? ï硫系玻璃中§诱导的光学效应 of Ge-Sb-S system. 光电子学与先进材料杂志，卷. 5, 2005, p. 2299-2308.
  53. Kozdras A., Shpotyuk O., Kovalskiy A., Filipecki J. Modified positron annihilation model for glassy-like As2Se3. Acta Physica Polonica A, vol. 107, 2005, p. 832-836.
  54. Kovalskiy A. 三元体系中辐射诱导效应的组成趋势 of chalcogenide glasses. Radiation Effects & Defects in Solids, vol. 158, 2003, p. 391-397.
  55. Shpotyuk O., Kovalskiy A., Filipecki J., Hyla M., Kozdras A. A nanoscale characterisation 用PAL技术研究类玻璃As2Se3半导体的扩展缺陷. Physica B, vol. 340-342, 2003, p. 960-964.
  56. Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R. 辐照后热刺激 某些三元硫系玻璃的回收. 光电与高级学报 Materials, vol. 5, No 5, 2003, p. 1169-1179.
  57. Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R., Popescu M. Chemical interaction ï§-辐照诱导的含杂质的硫系玻璃半导体. 光电子学与先进材料杂志，卷. 5, No 5, 2003, p. 1181-1185.
  58. Filipecki J., Shpotyuk O.I., Kozdras A., Kovalskiy A. Positron lifetime study of native 硫系玻璃中的空位样缺陷. 辐射物理与化学，卷. 68, No 3-4, 2003, p. 557-559.
  59. Balitska V., Golovchak R., Kovalskiy A., Skordeva E., Shpotyuk O. Effect of Co60 ï§-irradiation As-Ge-S玻璃光学性质的研究. 非结晶固体杂志，卷. 326-327, 2003, p. 130-134.
  60. Shpotyuk O., Golovchak R., Kovalsky A., Kavetskyy T. Time and temperature stability 辐射诱导三元硫系玻璃光学性质变化的研究 semiconductor systems. Functional Materials, vol. 10, No 2, 2003, p. 317-322. 
  61. Kovalskiy A., Kavetskyy T., Plewa J., Shpotyuk O. 辐射诱发的解释 用自由体积法和共价法研究了锗锑硫系硫系玻璃中的各种现象 chemical bonds concepts. Solid State Phenomena, vol. 90-91, 2003, p. 241-246.
  62. Shpotyuk O., Filipecki J., Kozdras A., Kovalskiy A. Coordination positron-trapping 玻璃体硫族半导体的中心. Physica Status Solidi C, vol. 0, No 2, 2003, p. 795-798.
  63. Shpotyuk O., Filipecki J., Golovchak R., Kovalskiy A., Hyla M. Application of positron 硫族化物中ï§-辐照应力的湮灭寿命技术 vitreous semiconductors. 工程材料学报，2002,5. 4, No 8, p. 571-574.
  64. Shpotyuk O., Golovchak R., Kovalskiy A., Pamukchieva V., Skordeva E., Arsova D. On 玻璃体As2S3-GeS2中辐射诱导光学效应的机制. Ukrainian 物理光学学报，2002，第5期. 3, No 2, p. 134-143. 
  65. Shpotyuk O., Kovalskiy A. 辐射光学性质的组成趋势 chalcogenide glasses. 光电子与先进材料学报，2002,5. 4, No. 3, p. 751-762.
  66. Shpotyuk O., Filipecki J., Hyla M., Kovalskiy A., Golovchak R. Coordination defects 用正电子湮灭寿命研究硫系非晶半导体. Physica B, 2001, v. 308-310, p. 1011-1014.
  67. Shpotyuk O., Kovalskiy A., Mrooz O., Shpotyuk L., Pekhnyo V., Volkov S. Technological 尖晶石基CuxNi1-x-yCo2yMn2-yO4陶瓷的改性. Journal of the European Ceramic Society, 2001, v.21, p. 2067-2070.
  68. Mrooz O., Kovalski A., Pogorzelska J., Shpotyuk O., Vakiv M., Butkiewicz B., Maciak J. 用于涌流保护的NTC热敏电阻的热电退化过程 of electronic circuits. 微电子可靠性，2001,v. 41, p. 773-777.
  69. Butkiewicz B., Golovchak R., Kovalskiy A., Shpotyuk O., Vakiv M. On the problem of 某些三元硫系玻璃中辐射诱导光学效应的弛豫. Radiation Effects & Defects in Solids, 2001, v. 153, p. 211-219.
  70. Shpotyuk O.I., Filipecki J., Golovchak R.Ya., Kovalskiy A.P., Hyla M. Radiation-defects 用正电子湮没技术研究非晶态As-Ge-S. Journal of Optoelectronics and Advanced Materials, 2001, v. 3, No 2, p. 329-332.
  71. Shpotyuk O.I., Kavetsky T.S., Kovalskiy A.P., Lutciv R.V., Pamukchieva V.D. Radiation-induced GexSb40-xS60系统玻璃半导体的透光率变化. 乌克兰物理学报，2001，第5期. 46, No 4, p. 495-498.
  72. Kovalskiy A. 无定形三元体系中ï§诱导光学效应的特性 chalcogenide semiconductors. 光电学报，2001， v. 3, No 2, p. 323-327.
  73. Shpotyuk O., Hadzaman I., Mrooz O., Kovalskiy A., Vakiv M. Microscopic characterization 电路电流保护用含锰氧化物陶瓷. Practical Metallography, 2001, v. 32, p. 209-212.
  74. Shpotyuk O.I., Golovchak R.Ya., Kovalskiy A.P., Vakiv M.M., Pamukchieva V.D., Arsova D.D., Skordeva E.R. As2S3-GeS2半导体玻璃的辐射光学效应. 玻璃物理与化学，2001,5. 42, No 2, p. 95-98.
  75. Shpotyuk O., Vakiv M., Kovalskiy A.P., Skordeva E., Vateva E., Pamukchieva V., Golovchak R., Lutciv R. 锗砷硫化物玻璃的辐射诱导效应. Glass Physics and Chemistry, 2000, v. 26, No 3, p. 374-380. 
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